DatasheetsPDF.com

NE3505M04

Part Number	NE3505M04
Manufacturer	California Eastern Labs
Description	HETERO JUNCTION FIELD EFFECT TRANSISITOR
Published	Aug 14, 2014
Detailed Description	DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHA...
Datasheet	NE3505M04 PDF File

Overview

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3505M04 L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.
4dB TYP.
Ga=15.
5dB TYP.
@f=4GHz NF=0.
35dB TYP.
Ga=17dB TYP.
@f=2.
4GHz (Reference Only) NF=0.
45dB TYP.
Ga=14dB TYP.
@f=5.
8GHz (Reference Only) - Flat-lead 4-pin tin-type super mini-mold(M04) package APPLICATIONS - Satellite Radio(SDARS, DMB, etc.
) antenna LNA - 5.
8GHz-band WLAN LNA - LNA for Micro-wave communication system ORDERING INFORMATION PART NUMBER NE3505M04 NE3505M04-T2 Quantity 50pcs (Non reel) 3 Kpcs/reel V76 Marking Packaging Style 8 mm wide emboss taping 1pin(source), 2pin(Drain) feed hole direction Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3505M04 ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C ) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature S...

Similar Datasheet

NE3505M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR - California Eastern Labs

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)