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NX6342EP

Part Number	NX6342EP
Manufacturer	California Eastern Labs
Description	LASER DIODE
Published	Aug 14, 2014
Detailed Description	A Business Partner of Renesas Electronics Corporation. Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASE...
Datasheet	NX6342EP PDF File

Overview

A Business Partner of Renesas Electronics Corporation.
Preliminary NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Data Sheet R08DS0050EJ0100 Rev.
1.
00 Jan 19, 2012 APPLICATIONS • 10 Gb/s BASE-LR/LW (IEEE802.
3ae) FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.
5 mW Ith = 8 mA ηd = 0.
23 W/A TC = −5 to +85°C φ 5.
6 mm 6.
0 mm R08DS0050EJ0100 Rev.
1.
00 Jan 19, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation.
NX6342EP Chapter Title PACKAGE DIMENSIONS (UNIT: mm) (f 5.
6) *2 (f 4.
2) (f 3.
55) *2 *2 1.
0±0.
1 BOTTOM VIEW 1 2 3 4 (0.
3) 110°±2° *2 (0.
3) *2 f 2.
0 Focal Point D x = ±200 m m MAX.
D y = ±200 m m MAX.
*1 6.
0±0.
4 PIN CONNECTION 1...

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NX6342EP LASER DIODE - California Eastern Labs

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