N-Channel MOSFET
Description
BUK6E2R0-30C
N-channel TrenchMOS intermediate level FET
Rev. 02 — 7 September 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q...
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