BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 2 October 2007 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance I 175 °C rated I Q101 compl...
