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PMZB350UPE

NXP Semiconductors
Part Number PMZB350UPE
Manufacturer NXP Semiconductors
Description single P-channel Trench MOSFET
Published Aug 16, 2014
Detailed Description PMZB350UPE 1 August 2012 20 V, single P-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General descr...
Datasheet PDF File PMZB350UPE PDF File

PMZB350UPE
PMZB350UPE

Overview
PMZB350UPE 1 August 2012 20 V, single P-channel Trench MOSFET Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.
8 kV ESD protected 1.
3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.
5 V; Tamb = 25 ...


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