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PMDPB28UN

NXP Semiconductors

dual N-channel Trench MOSFET


Description
PMDPB28UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very f...



NXP Semiconductors

PMDPB28UN

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