BUK662R7-55C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 7 September 2010 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q...
