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BUK6C2R1-55C

NXP Semiconductors
Part Number BUK6C2R1-55C
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
Published Aug 21, 2014
Detailed Description D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev. 3 — 18 January 2012 Product data sheet 1. Product...
Datasheet PDF File BUK6C2R1-55C PDF File

BUK6C2R1-55C
BUK6C2R1-55C

Overview
D2 PA K BUK6C2R1-55C N-channel TrenchMOS intermediate level FET Rev.
3 — 18 January 2012 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in high-performance automotive applications.
1.
2 Features and benefits  AEC Q101 compliant  High current handling capability, up to 320 A  Low conduction losses due to very low on-state resistance  Suitable for standard and logic level gate drive sources  Suitable for thermally demanding environments due to 175 °C rati...


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