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BUK7E13-60E

NXP Semiconductors
Part Number BUK7E13-60E
Manufacturer NXP Semiconductors
Description N-Channel MOSFET
Published Aug 21, 2014
Detailed Description BUK7E13-60E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1. Product profile 1.1 Genera...
Datasheet PDF File BUK7E13-60E PDF File

BUK7E13-60E
BUK7E13-60E

Overview
BUK7E13-60E 11 September 2012 N-channel TrenchMOS standard level FET Product data sheet 1.
Product profile 1.
1 General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.
3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig.
1 Tmb = 25 °C; Fig.
2 VGS = 10 V; ID = 15 A; Tj ...


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