P-Channel Enhancement Mode Field Effect Transistor
Description
S T M4435
S amHop Microelectronics C orp.
J AN.20 2006
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m W ) Max
ID
-8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = -10V 33 @ V G S = -4.5V
R ugged and reliable. S urface Mount P ackage.
D
8
D
7
D
6
D
5
S O-8 1
1 2 ...
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