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BUK6226-75C

NXP Semiconductors

N-channel TrenchMOS FET


Description
BUK6226-75C N-channel TrenchMOS FET Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use i...



NXP Semiconductors

BUK6226-75C

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