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IPD30N03S2L-10

Part Number	IPD30N03S2L-10
Manufacturer	Infineon
Description	Power-Transistor
Published	Aug 25, 2014
Detailed Description	IPD30N03S2L-10 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qual...
Datasheet	IPD30N03S2L-10 PDF File

Overview

IPD30N03S2L-10 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max ID 30 10 30 V mΩ A PG-TO252-3-11 Type IPD30N03S2L-10 Package PG-TO252-3-11 Marking 2N03L10 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; ...

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