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IPD320N20N3G

Infineon
Part Number IPD320N20N3G
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
Datasheet PDF File IPD320N20N3G PDF File

IPD320N20N3G
IPD320N20N3G

Overview
IPD320N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 200 32 34 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPD320N20N3 G Package Marking PG-TO252-3 320N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Ga...


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