MOSFETs
Description
TPC6008-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC6008-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 0.9 nC (typ.) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = ...
Similar Datasheet
- TPC6008-H MOSFETs - Toshiba Semiconductor
