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A844

FGX
Part Number A844
Manufacturer FGX
Description PNP Silicon Transistor
Published Sep 1, 2014
Detailed Description ·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION：General Purpose Amplifier Applications.. A844 —PNP silicon — ■■MAXIMUM RATINGS（Ta＝25℃） PA...
Datasheet PDF File A844 PDF File

A844
A844

Overview
·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLICATION：General Purpose Amplifier Applications.
.
A844 —PNP silicon — ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -55 -55 -5 -100 300 150 V V V mA mW ℃ ﹣55~150 ℃ ■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -55 -55 -5 -0.
66 -0.
1 200 2 -0.
75 -0.
5 MIN.
160 TYP.
MAX.
UNIT 500 -0.
1 -0.
05 µA µA V V V V V TEST CONDITION VCE= -12V，Ic= -2mA VCB= -18V，IE=0 VEB= -2V，Ic=0 Ic= -0.
1mA，IE=0 Ic= -1mA，IB=0 IE= -0.
1mA，Ic=0 VCE= -12V，Ic= -2mA Ic= -10mA，IB= -1mA Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance BVEBO VBE VCE(sat) fT Cob MHz Ic= -2mA，VCE= -12V PF VCB= -10V, IE=0, f = 1MHz ■■hFE Classification Classification hFE C 160~320 D 250~500 ...


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