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TPC8223-H

Toshiba
Part Number TPC8223-H
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Sep 2, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8223-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • M...
Datasheet PDF File TPC8223-H PDF File

TPC8223-H
TPC8223-H

Overview
MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8223-H 1.
Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2.
Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.
6 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.
) (VGS = 4.
5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA) 3.
Packaging and Internal Circuit TPC8223-H SOP-8 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain Start of commercial production 2010-10 1 2014-02-27 Rev.
4.
0 TPC8223-H 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 9 A Drain current (pulsed) Power dissipation (single operation) (t = 10 s) (Note 1) (Note 2), (Note 4) IDP PD(1) 36 1.
5 W Power dissipation (per device for dual (t = 10 s)...


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