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GT15M321

Toshiba Semiconductor
Part Number GT15M321
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 3, 2014
Detailed Description GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS l ...
Datasheet PDF File GT15M321 PDF File

GT15M321
GT15M321

Overview
GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed l Low Saturation Voltage : tf = 0.
20 µs (TYP.
) (IC = 15 A) : VCE (sat) = 1.
8V (TYP.
) (IC = 15A) Unit: mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitter−Collector Foward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 900 ±25 15 30 15 120 55 150 −55~150 UNIT V V A A W °C °C JEDEC JEITA TOSHIBA Weight: 5.
8 g ― ― 2−16F1A EQUIVALENT CIRCUIT 1 2002-02-06 GT15M321 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−off Current Gate-Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Turn−on Time Switching Time Fall Time Turn−of...


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