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GT40G121

Part Number	GT40G121
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Sep 3, 2014
Detailed Description	GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance...
Datasheet	GT40G121 PDF File

Overview

GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm · · · Enhancement-mode High speed: tf = 0.
30 µs (typ.
) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.
8 V (typ.
) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 400 ±25 40 100 100 150 -55~150 Unit V V A W °C °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA TO-220AB ― 2-10P1C Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage ...

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GT40G121 Silicon N-Channel IGBT - Toshiba Semiconductor

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