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TPH2R306NH

Toshiba

MOSFETs


Description
TPH2R306NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R306NH 1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ.) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) ...



Toshiba

TPH2R306NH

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