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TK30E06N1

Toshiba Semiconductor
Part Number TK30E06N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK30E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low dr...
Datasheet PDF File TK30E06N1 PDF File

TK30E06N1
TK30E06N1

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK30E06N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 12.
2 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
2 mA) 3.
Packaging and Internal Circuit TK30E06N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 43 A Drain current (DC) (Note 1), (Note 3) ID 30 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 95 Power dissipation (Tc = 25) PD 53 W Single-pulse avalanche energy (Note 4) EAS 38 mJ Avalanche current IAR 30 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
...


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