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TK30S06K3L

Toshiba Semiconductor
Part Number TK30S06K3L
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS) TK30S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Swit...
Datasheet PDF File TK30S06K3L PDF File

TK30S06K3L
TK30S06K3L

Overview
MOSFETs Silicon N-channel MOS (U-MOS) TK30S06K3L 1.
Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.
0 to 3.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK30S06K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-04 1 2014-08-04 Rev.
5.
0 TK30S06K3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 30 A Drain current (pulsed) (Note 1) IDP 60 Power dissipation (Tc = 25) PD 58 W Single-pulse avalanche energy (Note 2) EAS 32 mJ Avalanche current IAR 30 A Channel temperature (Note 3) Tch 175  Storage temperature (...


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