MOSFETs
Description
TK60A08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK60A08J1
Switching Regulator Application
High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 μA (max) ...
Similar Datasheet
- TK60A08J1 MOSFETs - Toshiba Semiconductor