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TK4P55DA

Toshiba Semiconductor
Part Number TK4P55DA
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description MOSFETs Silicon N-Channel MOS (π-MOS) TK4P55DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK4P55DA PDF File

TK4P55DA
TK4P55DA

Overview
MOSFETs Silicon N-Channel MOS (π-MOS) TK4P55DA 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance : RDS(ON) = 2.
0 Ω (typ.
) (2) High forward transfer admittance : |Yfs| = 1.
8 S (typ.
) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550V) (4) Enhancement mode : Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK4P55DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2009-12 1 2015-03-06 Rev.
1.
0 TK4P55DA 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 550 V Gate-source voltage VGSS ±30 Dra...


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