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TK2P60D

Toshiba Semiconductor
Part Number TK2P60D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 5, 2014
Detailed Description TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK2P60D Switching Regulator Applications • ...
Datasheet PDF File TK2P60D PDF File

TK2P60D
TK2P60D

Overview
TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK2P60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 3.
3 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 1.
0 S (typ.
) • Low leakage current: IDSS = 10 μA (VDS = 600 V) • Enhancement-mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) 1.
5 ± 0.
2 6.
5 ± 0.
2 5.
2 ± 0.
2 Unit: mm 0.
6 MAX.
5.
5 ± 0.
2 9.
5 ± 0.
3 1.
2 MAX.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current R...


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