DatasheetsPDF.com

TK100E06N1

Toshiba Semiconductor
Part Number TK100E06N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 10, 2014
Detailed Description TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E06N1 1. Applications • Switching Voltage Regulators 2. Featu...
Datasheet PDF File TK100E06N1 PDF File

TK100E06N1
TK100E06N1

Overview
TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E06N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.
9 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)