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TK25E06K3

Toshiba Semiconductor
Part Number TK25E06K3
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 11, 2014
Detailed Description TK25E06K3 MOSFETs Silicon N-channel MOS (U-MOS) TK25E06K3 1. Applications • Switching Voltage Regulators 2. Features ...
Datasheet PDF File TK25E06K3 PDF File

TK25E06K3
TK25E06K3

Overview
TK25E06K3 MOSFETs Silicon N-channel MOS (U-MOS) TK25E06K3 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.
) High forward transfer admittance: |Yfs| = 50 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Channel temperature Storage temperature (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) (RGS = 20 kΩ) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 25 75 60 54 25 6 150 -55 to 150 W mJ A mJ  A Unit V Note: Using continuously under heavy loads (e.
g...


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