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SSM3K56CT

N-Channel MOSFET

Description

SSM3K56CT MOSFETs Silicon N-Channel MOS SSM3K56CT 1. Applications High-Speed Switching 2. Features (1) (2) 1.5-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration 1...

Toshiba Semiconductor

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