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SSM3K56MFV

Toshiba Semiconductor
Part Number SSM3K56MFV
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 14, 2014
Detailed Description MOSFETs Silicon N-Channel MOS SSM3K56MFV 1. Applications • High-Speed Switching 2. Features (1) 1.5-V gate drive voltage...
Datasheet PDF File SSM3K56MFV PDF File

SSM3K56MFV
SSM3K56MFV

Overview
MOSFETs Silicon N-Channel MOS SSM3K56MFV 1.
Applications • High-Speed Switching 2.
Features (1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.
8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.
5 V) 3.
Packaging and Pin Configuration VESM SSM3K56MFV 1.
Gate 2.
Source 3.
Drain Start of commercial production 2013-02 1 2014-04-04 Rev.
2.
0 SSM3K56MFV 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID 800 mA Drain curr...


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