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SSM6923O

Silicon Standard
Part Number SSM6923O
Manufacturer Silicon Standard
Description P-CHANNEL POWER MOSFET
Published Sep 14, 2014
Detailed Description SSM6923O P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE P-channel MOSFET Low on-resistance Fast switching characteristics ...
Datasheet PDF File SSM6923O PDF File

SSM6923O
SSM6923O

Overview
SSM6923O P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE P-channel MOSFET Low on-resistance Fast switching characteristics Surface-mount package A K A A BVDSS S G -20V -3.
5A 20V 1A 1.
5A R DS(ON) @ 4.
5V 50mΩ S D TSSOP-8 ID Schottky Diode VKA Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Vf @ 0.
5V IF D A G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID @ TA=25°C ID @ TA=70°C IDM IF IFM PD @ TA=25°C Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) Continuous Drain Current (MOSFET) Pulsed Drain Current1,2 (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Linear Derating Factor (MOSFET) Total Power Dissipation (Schottky) Linear Derating Factor (Schottky) TSTG TJ Storage Temperature Range Operating Junction Temperature Range 1 -55 to 150 -55 to 125 3 Rating -20 20 ± 12 - 3.
5 - 2.
8 - 30 1 25 1 Units V V V A A A A A W W/°C W W/ °C °C °C Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient (MOSFET) Max.
Thermal Resistance Junction-ambient (Schottky) Max.
Value 125 125 Unit °C/W °C/W Rev.
2.
02 1/29/2004 www.
SiliconStandard.
com 1 of 5 SSM6923O Electrical Characteristics @ T j= 25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
-20 -0.
5 - Typ.
0.
03 10 15.
6 2.
1 5.
2 8.
2 9.
4 66.
4 48 660 285 130 Max.
Units 50 85 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-4.
5V, ID=-3.
5A VGS=-2.
5V, ID=-2.
7A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Sourc...


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