P-Channel Enhancement Mode Field Effect Transistor
Description
Gr Pr
STS3409
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-30V
ID
-2.2A
R DS(ON) (m Ω) Max
169 @ VGS=-10V 293 @ VGS=-4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
S OT -23
D S G
G
D
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C u...
