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P2904BD

NIKO-SEM
Part Number P2904BD
Manufacturer NIKO-SEM
Description N-Channel MOSFET
Published Sep 17, 2014
Detailed Description NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free D P...
Datasheet PDF File P2904BD PDF File

P2904BD
P2904BD

Overview
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 29mΩ ID 25A G S 1.
GATE 2.
DRAIN 3.
SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 2 1 SYMBOL VDS VGS LIMITS 40 ±20 25 20 75 27 37 30 20 -55 to 150 UNITS V V TC = 25 °C TC = 70 °C ID IDM IAS A L = 0.
1mH TC = 25 °C TC = 70 °C EAS PD Tj, Tstg mJ W °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RθJc RθJA TYPICAL MAXIMUM 4.
1 40 UNITS °C / W °C / W Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125 °C VDS = 5V, VGS = 10V 40 2 2.
4 3 V ±250 nA 1 10 µA A 75 REV 1.
0 1 Oct-14-2010 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2904BD TO-252 Halogen-Free & Lead- Free VGS = 5V, ID = 8A Drain-Source On-State 1 Resistance Forward Transconductance 1 26 22 19 30 50 45 29 S mΩ RDS(ON) VGS = 7V, ID = 8A VGS = 10V, ID = 10A gfs VDS = 5V, ID = 10A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge 2 2 2 Ciss Coss Crss Qg(VGS = 10V) Qg(VGS = 4.
5V) Qgs Qgd Rg 2 1150 VGS = 0V, VDS = 20V, f = 1MHz 157 80 19 VDS = 0.
5V(BR)DSS, ID = 10A 9 4.
5 3 VGS = 0V, VDS = 0V, f = 1MHz 1.
55 10 VDS = 20V, RL = 1Ω ID ≅ 1A, VGS = 10V, RGS = 6Ω 6 26 6 nS...


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