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Si4441EDY

Part Number	Si4441EDY
Manufacturer	Vishay
Description	P-Channel 30-V (D-S) MOSFET
Published	Sep 17, 2014
Detailed Description	Si4441EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) 0.016 at ...
Datasheet	Si4441EDY PDF File

Overview

Si4441EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) 0.
016 at VGS = - 10 V 0.
026 at VGS = - 4.
5 V ID (A) - 10.
6 - 8.
3 FEATURES • TrenchFET® Power MOSFET • ESD Protected: 2500 V Pb-free Available APPLICATIONS • Battery and Load Switching - Notebook RoHS* COMPLIANT SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4441EDY-T1 Si4441EDY-T1-E3 (Lead (Pb)-free) P-Channel 8 7 6 5 D D D D G 7600 S D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Diss...

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Si4441EDY P-Channel 30-V (D-S) MOSFET - Vishay

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