SSD5030N
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
30V
TO-252
D
ID (A)
50A
RDS(ON) (mΩ) Max 9.5 @VGS = 10V 19.5 @VGS = 4.5V
G S
D
FEATURES
Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Sourc...
