P-Channel Enhancement Mode MOSFET
Description
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 65 @VGS = - 10V -30V -15A 115 @VGS = - 5V 130 @VGS = - 4.5V
G S D
SSD1030P
TO-252
D
FEATURES
Super high density cell design for low RDS(ON). Rugged and reliable. TO-252 package. Pb free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source...
South Sea Semiconductor
SSD1030P PDF File
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