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SSM6P40TU

Toshiba Semiconductor
Part Number SSM6P40TU
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Sep 18, 2014
Detailed Description SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU ○ Power Management Switch Applications ○...
Datasheet PDF File SSM6P40TU PDF File

SSM6P40TU
SSM6P40TU

Overview
SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • • • 4.
0 V drive P-ch, 2-in-1 Low ON-resistance: Unit: mm 2.
1±0.
1 1.
7±0.
1 0.
65 0.
65 1 2 3 6 5 4 0.
166±0.
05 Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 ± 20 -1.
4 -2.
8 500 150 −55 to150 Unit V V A mW °C °C 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1 0.
7±0.
05 UF6 JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the TOSHIBA 2-2T1B reliability significantly even if the operating conditions (i.
e.
operating Weight: 7.
0 mg (typ.
) temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note1: Mounted on an FR4 board.
(Total dissipation) 2 (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 PP2 1 2 3 1 Q1 Q2 2 3 Start of commercial production 2008-04 1 2014-03-01 +0.
1 0.
3-0.
05 2.
0±0.
1 1.
3±0.
1 SSM6P40TU Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Switching time T...


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