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SSM6N55NU

Toshiba Semiconductor
Part Number SSM6N55NU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 18, 2014
Detailed Description SSM6N55NU MOSFETs Silicon N-Channel MOS SSM6N55NU 1. Applications • • Power Management Switches DC-DC Converters 2. Fe...
Datasheet PDF File SSM6N55NU PDF File

SSM6N55NU
SSM6N55NU

Overview
SSM6N55NU MOSFETs Silicon N-Channel MOS SSM6N55NU 1.
Applications • • Power Management Switches DC-DC Converters 2.
Features (1) (2) 4.
5V gate drive voltage.
Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.
5 V) 3.
Packaging and Pin Configuration 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1 UDFN6 Start of commercial production 1 2011-11 2014-04-04 Rev.
2.
0 SSM6N55NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) (Q1,Q2 Common) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Channel temperature Storage temp...


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