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TK40J60U

Toshiba Semiconductor
Part Number TK40J60U
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 20, 2014
Detailed Description TK40J60U MOSFETs Silicon N-Channel MOS (DTMOS) TK40J60U 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK40J60U PDF File

TK40J60U
TK40J60U

Overview
TK40J60U MOSFETs Silicon N-Channel MOS (DTMOS) TK40J60U 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.
065 Ω (typ.
) High forward transfer admittance: |Yfs| = 30 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) (Heatsink) 3: Source (S) TO-3P(N) 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Channel temperature Storage temperature (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 40 80 320 540 20 32 150 -55 to 150 W mJ A mJ  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of ...


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