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TPCC8002-H

Toshiba Semiconductor
Part Number TPCC8002-H
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 20, 2014
Detailed Description TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Conve...
Datasheet PDF File TPCC8002-H PDF File

TPCC8002-H
TPCC8002-H

Overview
TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.
1 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 7.
6 mΩ (typ.
) ( VGS = 4.
5 V) High forward transfer admittance: |Yfs| = 65 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 22 66 30 1.
9 0.
7 126 22 2.
1 150 −55 to 150 W W W mJ A 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Unit V V V A Pulsed (Note 1) Drain power dissipation Drain power dissipation Drain power dissipation (Tc = 25 ) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25 ) (Note 4) Channel temperature Storage temperature range Weight: 0.
02 g (typ.
) mJ °C °C Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Handle with care...


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