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AP1332GEU-HF

Advanced Power Electronics
Part Number AP1332GEU-HF
Manufacturer Advanced Power Electronics
Description N-channel Enhancement mode Power MOSFET
Published Sep 21, 2014
Detailed Description AP1332GEU-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Gate Drive ▼ Small Pack...
Datasheet PDF File AP1332GEU-HF PDF File

AP1332GEU-HF
AP1332GEU-HF

Overview
AP1332GEU-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Gate Drive ▼ Small Package Outline ▼ RoHS Compliant & Halogen-Free SOT-323 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S 20V 600mΩ 600mA Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 +8 600 470 2.
5 0.
35 0.
003 -55 to 150 -55 to 150 Unit V V mA mA A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 360 Unit ℃/W 1 201204255 Data and specifications subject to change without notice AP1332GEU-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min.
20 0.
5 - Typ.
0.
02 1 1.
3 0.
3 0.
5 21 53 100 125 38 17 12 Max.
600 2 1.
25 1 10 +30 2 60 - Unit V V/℃ mΩ Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance VGS=4.
5V, ID=600mA VGS=2.
5V, ID=300mA VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=5V, ID=600mA VDS=20V, VGS=0V VGS=+8V, VDS=0V ID=600mA VDS=16V VGS=4.
5V VDS=10V ID=600mA RG=3.
3Ω,VGS=5V RD=16.
7Ω VGS=0V VDS=10V f=1.
0MHz Drain-Source Leakage Current (Tj=70 C) VDS=16V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Inp...


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