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AP3R303GMT-HF

Advanced Power Electronics
Part Number AP3R303GMT-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 21, 2014
Detailed Description Advanced Power Electronics Corp. AP3R303GMT-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple D...
Datasheet PDF File AP3R303GMT-HF PDF File

AP3R303GMT-HF
AP3R303GMT-HF

Overview
Advanced Power Electronics Corp.
AP3R303GMT-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D BVDSS ▼ SO-8 Compatible with Heatsink RDS(ON) ▼ Low On-resistance G ID5 ▼ RoHS Compliant & Halogen-Free S Description AP3R303 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 5x6 ppackage is special for voltage conversion application S S using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
S G 30V 3.
3mΩ 105A D D D D PMPAK 5x6 Absolute Maximum Ratings@Tj=25o.
C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V5 Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 30 +20 105 31 25 250 56.
8 5 28.
8 -55 to 150 -55 to 150 V V A A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data & specifications subject to change without notice Value 2.
2 25 Units ℃/W ℃/W 1 201410203 AP3R303GMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Ch...


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