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AP2310GG-HF

Advanced Power Electronics
Part Number AP2310GG-HF
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Sep 24, 2014
Detailed Description AP2310GG-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼...
Datasheet PDF File AP2310GG-HF PDF File

AP2310GG-HF
AP2310GG-HF

Overview
AP2310GG-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 90mΩ 2.
7A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
SOT-89 D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 3 Rating 60 +20 2.
7 2.
2 10 1.
25 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 100 Unit ℃/W Data and specifications subject to change without notice 1 201010121 AP2310GG-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2.
5A VGS=4.
5V, ID=1.
5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Total Gate Charge 2 2 Min.
60 1 - Typ.
7 6.
5 1.
5 3.
5 5 5 17 4 550 70 50 Max.
Units 90 120 3 10 +100 10.
5 880 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=10V, ID=2.
5A VDS=48V, VGS=0V VGS=+20V, VDS=0V ID=2.
5A VDS=48V VGS=4.
5V VDS=30V ID=1A RG=3.
3Ω VGS=10V VGS=0V VDS=15V f=1.
0MHz Drain-Source Leakage Current Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 ...


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