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AP95T07AGP-HF

Advanced Power Electronics
Part Number AP95T07AGP-HF
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Sep 24, 2014
Detailed Description AP95T07AGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ ...
Datasheet PDF File AP95T07AGP-HF PDF File

AP95T07AGP-HF
AP95T07AGP-HF

Overview
AP95T07AGP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 75V 4.
8mΩ 170A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial through-hole applications.
G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Package Limited) Rating 75 +20 170 120 120 680 300 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Pulsed Drain Current 1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.
5 62 Units ℃/W ℃/W 1 200908171 Data and specifications subject to change without notice AP95T07AGP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=60A VDS=VGS, ID=250uA VDS=10V, ID=60A VDS=75V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=60V VGS=10V VDS=40V ID=40A RG=3.
3Ω,VGS=10V RD=1Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
75 2 - Typ.
90 93 13 43 17 72 46 93 920 345 1.
2 Max.
Units 4.
8 4 25 +100 150 V mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller...


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