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AP75N07AGP-HF

Advanced Power Electronics
Part Number AP75N07AGP-HF
Manufacturer Advanced Power Electronics
Description N-Channel MOSFET
Published Sep 24, 2014
Detailed Description AP75N07AGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast...
Datasheet PDF File AP75N07AGP-HF PDF File

AP75N07AGP-HF
AP75N07AGP-HF

Overview
AP75N07AGP-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 75V 11mΩ 80A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial through-hole applications and suited for low voltage applications such as DC/DC converters.
G D S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 4 Rating 75 +30 80 70 320 300 3 Units V V A A A W mJ ℃ ℃ Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 450 -55 to 175 -55 to 175 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.
5 62 Units ℃/W ℃/W 1 201306243 Data & specifications subject to change without notice AP75N07AGP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o o Test Conditions VGS=0V, ID=250uA 2 Min.
75 2 - Typ.
78 100 13 47 15 80 67 86 3220 650 220 3.
5 Max.
11 4 10 250 +100 160 5150 7 Units V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=15V, ID=40A VDS=75V, VGS=0V VGS=+30V, VDS=0V ID=40A VDS=60V VGS=10V VDD=40V ID=30A RG=3.
3Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Drain-Source Leakage Curre...


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