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AP4435GYT-HF

Advanced Power Electronics
Part Number AP4435GYT-HF
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP4435GYT-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Size & Lower Prof...
Datasheet PDF File AP4435GYT-HF PDF File

AP4435GYT-HF
AP4435GYT-HF

Overview
AP4435GYT-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free G P-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID D -30V 21mΩ -11A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters application and lower 1.
0mm profile with backside heat sink.
S S D D D S G PMPAK ® 3x3 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 +25 -11 -8.
7 -40 3.
57 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 6 35 Unit ℃/W ℃/W 1 201009214 Data and specifications subject to change without notice AP4435GYT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-10A VGS=-4.
5V, ID=-6A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-30V, VGS=0V VGS=+20V, VDS=0V ID=-6A VDS=-15V VGS=-4.
5V VDS=-15V ID=-1A RG=3.
3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-15V f=1.
0MHz f=1.
0MHz Min.
-30 -1 - Typ.
17 26 -1.
95 15 15 3 8 12 7.
5 39 21 245 210 5.
3 Max.
Units 21 36 -3 -10 +100 24 10.
6 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time...


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