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AP90T03GH

Advanced Power Electronics
Part Number AP90T03GH
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP90T03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Lower On- resistance ▼ Simple Drive Requirement ...
Datasheet PDF File AP90T03GH PDF File

AP90T03GH
AP90T03GH

Overview
AP90T03GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Lower On- resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 4mΩ 75A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP90T03GJ) is available for low-profile applications.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 30 ± 20 75 63 350 96 0.
7 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 1.
3 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 201211031 AP90T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 0.
8 - Typ.
0.
015 Max.
Units 4 6 3 1 25 ±100 96 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=45A VGS=4.
5V, ID=30A 55 60 8.
5 38 14 83 66 120 1010 890 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=40A VDS=24V VGS=4.
5V VDS=15V ID=30A RG=3.
3Ω,VGS=10V RD=0.
5Ω VGS=0V VDS=25V ...


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