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AP4430GM-HF-3

Advanced Power Electronics
Part Number AP4430GM-HF-3
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description Advanced Power Electronics Corp. AP4430GM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On...
Datasheet PDF File AP4430GM-HF-3 PDF File

AP4430GM-HF-3
AP4430GM-HF-3

Overview
Advanced Power Electronics Corp.
AP4430GM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free D BV DSS G S 35V 4.
6mΩ 20A RDS(ON) ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP4430GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G SO-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 35 ±20 20 17 80 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 3.
1 0.
025 -55 to 150 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 40 Unit °C/W Ordering Information AP4430GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2009 Advanced Power Electronics Corp.
USA www.
a-powerusa.
com 200910141-3 1/5 Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=18A VGS=4.
5V, ID=12A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 AP4430GM-HF-3 Min.
35 1 - Typ.
36 22 3.
5 12 9.
5 7.
5 34 20 420 235 1 Max.
Units 4.
6 6.
8 3 10 ±100 35 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=250uA VDS=10V, ID=12A VDS=28V, VGS=0V VGS=±20V, VDS=...


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