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HAT1024R

Hitachi Semiconductor
Part Number HAT1024R
Manufacturer Hitachi Semiconductor
Description Silicon P-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476 G (Z) 8th. Edition June 1997 Features •...
Datasheet PDF File HAT1024R PDF File

HAT1024R
HAT1024R

Overview
HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476 G (Z) 8th.
Edition June 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1024R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings –30 ±20 –3.
5 –28 –3.
5 Unit V V A A A W W °C °C Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg Note2 Note3 2 3 150 –55 to +150 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s 3.
2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s 2 HAT1024R Electrical Characteristics (Ta = 25°C) It...


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