DatasheetsPDF.com

AP96T07GP-HF

Part Number	AP96T07GP-HF
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 4, 2014
Detailed Description	AP96T07GP-HF RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼...
Datasheet	AP96T07GP-HF PDF File

Overview

AP96T07GP-HF RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 75V 4.
2mΩ 120A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial through-hole applications.
G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 3 Rating 75 +20 180 120 120 480 300 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.
5 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200911042 AP96T07GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=40A VDS=VGS, ID=250uA VDS=10V, ID=40A VDS=75V, VGS=0V VGS= +20V, VDS=0V ID=40A VDS=60V VGS=10V VDS=40V ID=40A RG=3.
3Ω,VGS=10V RD=1Ω VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
75 2 - Typ.
90 92 16 48 18 90 40 80 1000 270 1.
4 Max.
Units 4.
2 4 25 +100 150 2.
1 V mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on D...

Similar Datasheet

AP96T07GP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)