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AP05N50EI-HF

Advanced Power Electronics
Part Number AP05N50EI-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description AP05N50EI-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristi...
Datasheet PDF File AP05N50EI-HF PDF File

AP05N50EI-HF
AP05N50EI-HF

Overview
AP05N50EI-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 1.
6Ω 5A S Description The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.
G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM PD@TC=25℃ PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 500 +30 5 20 31.
3 1.
92 2 Units V V A A W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 12.
5 5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 65 Unit ℃/W ℃/W 1 201011301 Data & specifications subject to change without notice AP05N50EI-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2A VDS=400V, VGS=0V VGS=+25V, VDS=0V ID=1A VDS=400V VGS=10V VDD=250V ID=1A RG=3.
3Ω VGS=10V VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Min.
500 2 - Typ.
3.
5 20 4 8 10 4 27 18 775 75 10 3.
5 Max.
Units 1.
6 4 25 +10 32 1240 V Ω V S uA uA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Dr...


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