DatasheetsPDF.com

AP02N60P-HF

Advanced Power Electronics
Part Number AP02N60P-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 5, 2014
Detailed Description AP02N60P-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic...
Datasheet PDF File AP02N60P-HF PDF File

AP02N60P-HF
AP02N60P-HF


Overview
AP02N60P-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ Halogen Free & RoHS Compliant G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 2A S Description The TO-220 package is universally preferred for all commercialindustrial applications.
The device is suited for DC-DC, DC-AC converters for telecom, industrial and consumer environment.
G D S TO-220 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 2 1.
26 6 39 0.
31 2 Units V V A A A W W/ ℃ mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 130 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.
2 62 Units ℃/W ℃/W 1 201211203 Data & specifications subject to change without notice AP02N60P-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 3 Test Conditions VGS=0V, ID=250uA Min.
600 2 - Typ.
0.
6 0.
2 14 2 8.
5 9.
5 12 21 9 155 27 14 Max.
Units 8 4 10 100 +100 20 240 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=10V, ID=1A VDS=600V, VGS=0V Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V o Gate-Source Leakage Total Gate Charge 3 VGS=+30V, VDS=0V ID=2A VDS=480V VGS=10V VDD=300V ID=2A RG=10Ω VGS=10V VGS=0...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)